Selective growth of GaN and Al0.2Ga0.8N on GaN/AlN/6H-SiC (0001) multilayer substrates via organometallic vapor-phase epitaxy

Materials Research Society Symposium - Proceedings

Volumn 449, Issue , 1997, Pages 107-112

  Nam, O H ^a   Bremser, M D ^a   Ward, B L ^a   Nemanich, R J ^a   Davis, R F ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FIELD EMISSION MICROSCOPES; MORPHOLOGY; MULTILAYERS; NITRIDES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH;

GALLIUM NITRIDE; SELECTIVE GROWTH;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 0030709144     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)