Inversion domains generated at substrate steps in GaN/(0001) Al2O3 layers

Diamond and Related Materials

Volumn 8, Issue 2-5, 1999, Pages 314-318

  Barbaray, B ^a   Potin, V ^a   Ruterana, P ^a   Nouet, G ^a  

^a CNRS   (France)

Author keywords

Gallium nitride; High resolution electron microscopy; Molecular beam epitaxy; Step

Indexed keywords

ALUMINA; CRYSTAL ATOMIC STRUCTURE; CRYSTAL DEFECTS; HIGH RESOLUTION ELECTRON MICROSCOPY; INTERFACES (MATERIALS); MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM COMPOUNDS; SUBSTRATES; THIN FILMS;

GALLIUM NITRIDE; HOLT MODEL;

SEMICONDUCTING FILMS;

EID: 0032608057     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0925-9635(98)00315-x     Document Type: Review

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