Radiation hardened SOI CMOS and 1M SRAM

IEEE International SOI Conference

Volumn , Issue , 1997, Pages 172-173

  Fechner, P S ^a   Dougal, G D ^a   Sullwold, J G ^a   Swanson, R ^a   Shaw, G A ^a   Liu, S T ^a   Yue, C S ^a  

^a HONEYWELL   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CMOS INTEGRATED CIRCUITS; CRYSTAL DEFECTS; LEAKAGE CURRENTS; RADIATION HARDENING; RANDOM ACCESS STORAGE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING; SILICON WAFERS;

SEPARATION BY IMPLANTATION OF OXYGEN (SIMOX); STATIC RANDOM ACCESS MEMORY (SRAM);

SILICON ON INSULATOR TECHNOLOGY;

EID: 0031377556     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (1)