Defect related optical and electrical properties of MBE grown cubic GaN epilayers

Radiation Effects and Defects in Solids

Volumn 146, Issue 1-4, 1998, Pages 145-160

  As, D J ^a  

^a UNIVERSITY OF PADERBORN   (Germany)

Author keywords

Defects; Electrical transport; GaN; Luminescence; MBE

Indexed keywords

CATHODOLUMINESCENCE; CONTAMINATION; CRYSTAL DEFECTS; ELECTRIC CONDUCTIVITY OF SOLIDS; HALL EFFECT; MOLECULAR BEAM EPITAXY; OPTOELECTRONIC DEVICES; PHOTOLUMINESCENCE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR GROWTH; THERMAL EFFECTS;

CUBIC GALLIUM NITRIDE EPILAYERS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032312419     PISSN: 10420150     EISSN: None     Source Type: Journal    
DOI: 10.1080/10420159808220287     Document Type: Article

References (38)

1. S. Nakamura, T. Mukai and M. Senoh, Appl. Phys. Lett. 64, 1687 (1994).
2. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku and Y. Sugimoto, Jpn. J. Appl. Phys. 35, L74 (1996).
3. S.E. Hooper, C.T. Foxon, T.S. Cheng, L.C. Jenkins, D.E. Lacklison, J.W. Orton, T. Bestwick, A. Kean, M. Dawson and G. Duggan, J. Cryst. Growth 155, 157 (1995).
4. D. Schikora, M. Hankeln, D.J. As, K. Lischka, T. Litz, A. Waag, T. Buhrow and F. Henneberger, Phys. Rev. B 54(12), R8381 (1996).
5. R.C. Powell, N.E. Lee, Y.W. Kim and J.E. Greene, J. Appl. Phys. 73, 189 (1993).
6. H. Yang, O. Brandt and K.H Ploog, Phys. Status Solidi B 194, 1 (1996).
7. H. Siegle, L. Eckey, A. Hoffmann, C. Thomsen, B.K. Meyer, D. Schikora, M. Hankeln and K. Lischka, Solid State Commun. 96, 943 (1995).
8. D.J. As, F Schmilgus, C. Wang, B. Schöttker, D. Schikora and K. Lischka, Appl. Phys. Lett. 70, 1311 (1997).
9. G. Ramirez-Flores, H Navarrow-Contreras, A. Lastras-Martinez, R.C. Powell and J.E. Greene, Phys. Rev. B 50, 8433 (1994).
10. C. Wetzel, S. Fischer, J Krüger, E.E. Haller, R.J. Molnar, T.D. Moustakas, E.N. Mokhov and P.G Baranov, Appl. Phys. Lett. 68(18), 2556 (1996).
11. N N. Zinov'ev, A V. Andrianov, B.Y. Averbukh, I.D. Yaroshetskii, T S. Cheng, L.C Jenkins, S.E. Hooper, C.T. Foxon and J W. Orton, Semicond. Sci. Technol. 10, 1117 (1995).
12. C. Wang, D.J. As, B. Schöttker, D Schikora and K. Lischka, to be published in the Proceeding of the Int. Conf. on Silicon Carbide, III-Nitrides and Related Compounds, Stockholm, August 1997.
13. H. Okumura, K. Ohta, G. Feuillet, K. Balakrishnan, S. Chichibu, H. Hamaguchi, P Hacke and S. Yoshida, J Crystal Growth, 178, 113 (1997).
14. D.B. Holt and B.G. Yacobi, in SEM Micro-characterisation of Semiconductors, Techniques of Physics Vol. 12, eds. D.B Holt and D.C. Joy, (Academic Press, New York, 1989) p. 374.
15. W Grieshaber, E F. Schubert, I.D. Goepfert, R.F. Karlicek, Jr., M.J. Schurman and C. Tran, J. Appl. Phys. 80, 4615 (1996).
16. A. Hoffmann, Advances in Solid State Physics 36, 33 (1996).
17. M. Rubin, N. Newman, J.S Chan, T.C. Fu and J.T. Ross, Appl. Phys. Lett. 64, 64 (1994).
18. S. Strite and H. Morkoc, J. Vac. Sci. Technol B 10, 1237 (1992).
19. D C. Look, in Electrical Characterization of GaAs Materials and Devices (Wiley & Sons, Chichester, 1989), p. 83.
20. M.E. Lin, G. Xue, G.L Zhou, J E. Greene and H Morkoc, Appl. Phys. Lett. 63(7), 932 (1993).
21. O. Brandt, H. Yang, H. Kostial and K.H. Ploog, Appl. Phys. Lett. 69(18), 2707 (1996).
22. M. Rubin, N. Newman, J.S. Chan, T.C. Fu and J.T. Ross, Appl. Phys. Lett. 64(1), 64 (1994).
23. S Nakamura, M Senoh and T. Nukai, Jap. J. Appl. Phys. 30(10A), L 1708 (1991).
24. T. Tanaka, A. Watanabe, H. Amano, Y. Kobayashi, I. Akasaki, S. Yamazaki and M. Koike, Appl. Phys. Lett 65(5), 593 (1994).
25. W. Kim, A. Salvador, A.E. Botchkarev, O. Aktas, S.N. Mohammad and H. Morcoc, Appl. Phys. Lett. 69(4), 559 (1996).
26. D.J. As, D. Schikora, A. Greiner, M. Lübbers, J Mimkes and K. Lischka, Phys. Rev. B 54(16), R11118 (1996).
27. P. Blood and J.W Orton, in The Electrical Characterization of Semiconductors Majority Carriers and Electron States (Academic Press, London, 1992).
28. D.L. Rode and D.K. Gaskill, Appl. Phys. Lett. 66, 1972 (1995).
29. W. Götz, N.M. Johnson, R.A. Street, H. Amano and J. Akasaki, Mat. Res. Soc. Symp. Proc. 378, 491 (1995).
30. W. Götz, D.B. Oberman and J.S. Harris, Jr., Mat Res. Soc. Symp. Proc. 378, 527 (1995).
31. B. Pödör, Phys. Stat. Sol. 16, K167 (1966).
32. S.A. Ding, S.R. Barman, K. Horn, H. Yang, B. Yang, O. Brandt and K. Ploog, Appl Phys. Lett. 70 (18), 2407 (1997).
33. D.W. Jenkins and J.D. Dow, Phys. Rev. B 39, 3317 (1989).
34. P. Boguslawski, E.L. Briggs and J. Bernholc, Phys. Rev. B 51, 17255 (1995).
35. J. Neugebauer and C Van de Walle, Phys. Rev. B 50, 8067 (1994).
36. B. Pödör, Semicond. Sci. Technol. 11, 827 (1996).
37. J.W. Orton, Semicond. Sci. Technol. 10, 101 (1996).
38. A. Hoffmann, L. Eckey, P. Maxim, J.-Chr. Holst, R. Heitz, D.M. Hofmann, D. Kovalev, G. Stevde, D. Volm, B.K. Meyer, T. Detchprohm, K. Hiramatsu, H. Amano and I. Akasaki, Solid State Electronics 41(2), 275 (1997).