Tunneling through ultrathin GaAs n++-p++-n++ barrier grown by molecular layer epitaxy

IEEE Transactions on Electron Devices

Volumn 45, Issue 12, 1998, Pages 2551-2554

  Liu, Yong Xun ^a   Plotka, Piotr ^a   Suto, Ken ^a   Oyama, Yutaka ^a   Nishizawa, Jun Ichi ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

Effective tunnelling width; Molecular layer epitaxy; Ultrathin barrier

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRON TUNNELING; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; ULTRATHIN FILMS;

MOLECULAR LAYER EPITAXY; ULTRATHIN BARRIERS;

SCHOTTKY BARRIER DIODES;

EID: 0032312204     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.735735     Document Type: Article

References (13)

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