Planar-doped barriers in GaAs by molecular beam epitaxy

Electronics Letters

Volumn 16, Issue 22, 1980, Pages 836-838

  Malik, R J ^a   Aucoin, T R ^a   Ross, R L ^a   Board, K ^b   Wood, C E C ^c   Eastman, L F ^c  

^a U S ARMY RESEARCH LABORATORY   (United States)

^b SWANSEA UNIVERSITY   (United Kingdom)

^c Department of Obstetrics Gynecology   (United States)

Author keywords

Gallium arsenide; Semiconductor devices

Indexed keywords

SEMICONDUCTING GALLIUM ARSENIDE;

SEMICONDUCTOR DEVICES;

EID: 0019071535     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19800594     Document Type: Article

References (4)

1. Shannon, J. M.: Solid-State Electron., 1976, 19, p. 537
2. Shannon, J. M.: Appl. Phys. Lett., 1979, 35, p. 63
3. Allyn, C. L., Gossard, A. C., and Wiegmann, W.: Appl. Phys. Lett., 1980, 36, p. 373
4. Wood, C. E. C., Metze, G., Beery, J., and Eastman, L. F.: J. Appl Phys., 1980, 51