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Applied Physics Letters

Volumn 40, Issue 9, 1982, Pages 832-833

Electric properties of unipolar GaAs structures with ultrathin triangular barriers

(4) Gossard, A C a Kazarinov, R F a Luryi, S a Wiegmann, W a

a LUCENT TECHNOLOGIES (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33749973232 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.93245 Document Type: Article

Times cited : (8)

References (11)

1
- 0008456740
- (1980) Appl. Phys. Lett , vol.36 , pp. 373
- Allyn, C.L.¹ Gossard, A.C.² Wiegmann, W.³

2
- 0344433772
- (1980) Electron. Lett , vol.16 , pp. 837
- Malik, R.J.¹ Board, K.² Wood, C.E.C.³ Eastman, L.F.⁴ AuCoin, T.R.⁵ Ross, R.L.⁶

3
- 36749119663
- (1981) Appl. Phys. Lett , vol.38 , pp. 810
- Kazarinov, R.F.¹ Luryi, S.²

4
- 36749119865
- (1981) Appl. Phys. Lett , vol.39 , pp. 340
- Chen, C.Y.¹ Cho, A.Y.² Garbinski, P.A.³ Bethea, C.G.⁴ Levine, B.F.⁵

5
- 84951057841
- Proc. 39th Annual Device Research Conference, June, Santa Barbara, Ca.
- (1981) GaAs Planar Doped Barrier Transistors
- Malik, R.J.¹ Hollis, M.A.² Eastman, L.F.³ Wood, C.E.C.⁴ AuCoin, T.R.⁵

6
- 84951081573
- (private communication).
- Board, K.¹

7
- 84951207645
- (unpublished).
- Kazarinov, R.F.¹ Luryi, S.²

8
- 84951176429
- (in press).
- Solid-State Electron.
- Luryi, S.¹ Kazarinov, R.F.²

9
- 0003546026
- (Clarendon, Oxford)
- (1980) Metal-Semiconductor Contacts
- Rhoderick, E.H.¹

10
- 84951118984
- Proc. 39th Annual Device Research Conference, June, Santa Barbara, Ca.
- (1981) Charge Injection over Barriers in Unipolar Semiconductor Structures
- Luryi, S.¹ Kazarinov, R.F.²

11
- 0003777488
- 3d rev. ed. (Pergamon, London)
- (1977) Quantum mechanics: Nonrelativistic theory
- Landau, L.D.¹ Lifshitz, E.M.²

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.