Ideal static induction transistor implemented with molecular layer epitaxy

Applied Surface Science

Volumn 82-83, Issue C, 1994, Pages 91-96

  Płotka, Piotr ^a   Kurabayashi, Toru ^b   Oyama, Yutaka ^a   Nishizawa, Jun ichi ^b  

^a SEMICONDUCTOR RESEARCH INSTITUTE   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; GATES (TRANSISTOR); SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; TRANSISTORS;

IDEAL STATIC INDUCTION TRANSISTOR; MOLECULAR LAYER EPITAXY;

EPITAXIAL GROWTH;

EID: 3342976836     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/0169-4332(94)90201-1     Document Type: Article

References (13)

1. DC and AC characteristics of a nonalloyed delta-doped MESFET by atomic layer epitaxy
2. Field-effect transistor versus analog transistor (static induction transistor)
3. Proc. 1976 Conf. Solid State Devices
4. Punching through device and its integration—Static induction transistor
5. Temperature synchronized molecular layer epitaxy
6. Selective MLE growth of GaAs and surface treatment for ideal static induction transistor (ISIT) application