Selective MLE growth of GaAs and surface treatment for ideal static induction transistor (ISIT) application

Applied Surface Science

Volumn 82-83, Issue C, 1994, Pages 41-45

  Oyama, Yutaka ^a   Plotka, Piotr ^a   Nishizawa, Jun ichi ^b  

^a SEMICONDUCTOR RESEARCH INSTITUTE   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; INTERFACES (MATERIALS); LOW TEMPERATURE OPERATIONS; MASS SPECTROMETRY; PHOTOCHEMICAL REACTIONS; REACTION KINETICS; SEMICONDUCTOR DIODES; SEMICONDUCTOR GROWTH; SEMICONDUCTOR JUNCTIONS; SURFACE TREATMENT; TRANSISTORS; X RAY PHOTOELECTRON SPECTROSCOPY;

IDEAL STATIC INDUCTION TRANSISTOR (ISIT); PHOTOSTIMULATED MOLECULAR LAYER EPITAXY; QUADRUPOLE MASS SPECTROMETRY;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0028762153     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/0169-4332(94)90193-7     Document Type: Article

References (11)

1. Field-effect transistor versus analog transistor (static induction transistor)
2. Molecular Layer Epitaxy
3. Auger Characterization of Chemically Etched GaAs Surfaces
4. Photostimulated molecular layer epitaxy