Carrier injection by static induction mechanism in MLE-grown planar-doped barrier n+-i-p+-i-n+ structures

IEEE Transactions on Electron Devices

Volumn 44, Issue 1, 1997, Pages 195-197

  Liu, Y X ^a,b   Plotka, P ^a   Suto, K ^a   Oyama, Y ^a   Nishizawa, J ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b SEMICONDUCTOR RESEARCH INSTITUTE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENTS; ELECTRON EMISSION; EPITAXIAL GROWTH; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING; THERMIONIC CATHODES;

BALLISTIC ELECTRONS; CARRIER INJECTION; MOLECULAR LAYER EPITAXY (MLE); STATIC INDUCTION CONTROLLED POTENTIAL BARRIER; STATIC INDUCTION MECHANISM; THERMIONIC EMISSION THEORY;

SEMICONDUCTOR DIODES;

EID: 0030867154     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.554811     Document Type: Article

References (8)

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