The Influence of Debye Length on the C-V Measurement of Doping Profiles

IEEE Transactions on Electron Devices

Volumn 18, Issue 10, 1971, Pages 965-973

  Johnson, Walter C ^a,b   Panousis, Peter T ^b  

^a PRINCETON UNIVERSITY   (United States)

^b LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTORS;

EID: 0015143856     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1971.17311     Document Type: Article

References (5)

1. J. Hilibrand and R. D. Gold, “Determination of the impurity distribution in junction diodes from capacitance-voltage measurements,” RCA Rev., vol. 21, June 1960, pp. 245–252.
2. D. P. Kennedy, P. C. Murley, and W. Kleinfelder, “On the measurement of impurity atom distributions in silicon by the differential capacitance technique,” IBM J. Res. Develop., Sept. 1968. pp, 399–409.
3. D. P. Kennedy and R. R. O’Brien, “On the measurement of impurity atom distributions by the differential capacitance technique,” IBM J. Res. Develop., Mar. 1969, pp. 212–214.
4. W. E. Carter, private communication.
5. W. E. Carter, H. K. Gummel, and B. R. Chawla, “Interpretation of capacitance vs. voltage measurements of p-n junctions,” to be published.