Band-gap narrowing in highly doped n- and p-type GaAs studied by photoluminescence spectroscopy

Journal of Applied Physics

Volumn 66, Issue 9, 1989, Pages 4381-4386

  Borghs, G ^a   Bhattacharyya, K ^a   Deneffe, K ^a   Van Mieghem, P ^a   Mertens, R ^a  

^a IMEC   (Belgium)

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EID: 36549091023     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.343958     Document Type: Article

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