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Japanese Journal of Applied Physics, Part 2: Letters

Volumn 37, Issue 11 PART A, 1998, Pages

A large output voltage swing of a resonant tunneling flip-flop circuit employing a monostable-bistable transition logic element (MOBILE)

(5) Maezawa, Koichi a,b Matsuzaki, Hideaki a Osaka, Jiro a Yamamoto, Masafumi a Otsuji, Taiichi a

a NTT CORPORATION (Japan)

b NAGOYA UNIVERSITY (Japan)

Author keywords

Flip flop; HEMT; InAlAs; InGaAs; InP; Resonant tunneling diode; SCFL

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRON TUNNELING; HIGH ELECTRON MOBILITY TRANSISTORS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; TUNNEL DIODES;

MONOSTABLE-BISTABLE TRANSITION LOGIC ELEMENTS (MOBILE);

FLIP FLOP CIRCUITS;

EID: 0032208785 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.37.l1286 Document Type: Article

Times cited : (3)

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