High-speed operation of resonant tunnelling flip-flop circuit employing MOBILE (monostable-bistable transition logic element)

Electronics Letters

Volumn 33, Issue 20, 1997, Pages 1733-1734

  Maezawa, K ^a   Matsuzaki, H ^a   Arai, K ^a   Otsuji, T ^a   Yamamoto, M ^a  

^a NTT CORPORATION   (Japan)

Author keywords

High electron mobility transistors; Resonant tunnelling devices

Indexed keywords

HIGH ELECTRON MOBILITY TRANSISTORS; LOGIC GATES; NEGATIVE RESISTANCE; SEMICONDUCTING INDIUM PHOSPHIDE; TUNNEL DIODES;

MONOSTABLE BISTABLE TRANSITION LOGIC ELEMENTS (MOBILE); RESONANT TUNNELLING DEVICES;

FLIP FLOP CIRCUITS;

EID: 0031222634     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19971176     Document Type: Article

References (2)

1. MAEZAWA, K., AKEYOSHI, T., and MIZUTANI, T.: 'Functions and applications of monostable-bistable transition logic elements (MOBILES) having multiple-input terminals', IEEE Trans. Electron. Devices. 1994, 41, pp. 148-154
2. CHEN, K.J., MAEZAWA, K., and YAMAMOTO, M.: 'InP-based high-performance monostable-bistable transition logic elements (MOBILEs) using integrated multiple-input resonant tunnelling devices', IEEE Electron. Device Lett., 1996, 17, pp. 127-129