New self-aligned planar resonant-tunneling diodes for monolithic circuits

IEEE Electron Device Letters

Volumn 18, Issue 10, 1997, Pages 489-491

  Chen, C L ^a   Mathews, R H ^a   Mahoney, L J ^a   Maki, P A ^a   Molvar, K M ^a   Sage, J P ^a   Fitch, G L ^a   Sollner, T C L G ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ION IMPLANTATION; MOLECULAR BEAM EPITAXY; MONOLITHIC INTEGRATED CIRCUITS; OHMIC CONTACTS; PHOTORESISTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING BORON; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES;

DEEP PROTON IMPLANT; GAS SOURCE MOLECULAR BEAM EPITAXY; RESONANT TUNNELING DIODES; SHALLOW BORON IMPLANT; SILICON INTEGRATED CIRCUITS;

TUNNEL DIODES;

EID: 0031257314     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.624927     Document Type: Article

References (5)

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