Monolithic integrated resonant tunneling diode and heterostructure junction field effect transistor circuits

Solid-State Electronics

Volumn 39, Issue 10, 1996, Pages 1449-1455

  Yen, J C ^a   Zhang, Q ^a   Mondry, M J ^a   Chavarkar, P M ^a   Hu, E L ^a   Long, S I ^a   Mishra, U K ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; GATES (TRANSISTOR); INTEGRATED CIRCUIT LAYOUT; JUNCTION GATE FIELD EFFECT TRANSISTORS; PERFORMANCE; SEMICONDUCTOR DIODES; TECHNOLOGY;

HETEROSTRUCTURE JUNCTION MODULATED FIELD EFFECT TRANSISTORS; PROPAGATION DELAY; RESONANT TUNNELING DIODES;

MONOLITHIC INTEGRATED CIRCUITS;

EID: 0030269130     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(96)00065-2     Document Type: Review

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