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Japanese Journal of Applied Physics, Part 2: Letters

Volumn 37, Issue 11 SUPPL. B, 1998, Pages

Room-temperature continuous wave operation of InGaN laser diodes with vertical conducting structure on SiC substrate

(6) Kuramata, Akito a Kubota, Shin Ichi a Soejima, Reiko a Domen, Kay a Horino, Kazuhiko a Tanahashi, Toshiyuki a

a FUJITSU LABORATORIES LTD (Japan)

Author keywords

Continuous wave operation; GaN; InGaN; Laser diode; SiC; Vertical conduting sturcture

Indexed keywords

CONTINUOUS WAVE LASERS; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; LASER MODES; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SILICON CARBIDE; SUBSTRATES;

INDIUM GALLIUM NITRIDE; VERTICAL CONDUCTING STRUCTURES;

SEMICONDUCTOR LASERS;

EID: 0032205787 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.37.l1373 Document Type: Article

Times cited : (39)

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