Room-temperature pulsed operation of a GaInN multiple-quantum-well laser diode

Electronics Letters

Volumn 34, Issue 11, 1998, Pages 1105-1107

  Nakamura, F ^a   Kobayashi, T ^a   Tojo, T ^a   Asatsuma, T ^a   Naganuma, K ^a   Kawai, H ^a   Ikeda, M ^a  

^a SONY CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAVITY RESONATORS; CURRENT DENSITY; QUANTUM EFFICIENCY; SEMICONDUCTING GALLIUM COMPOUNDS;

ROOM TEMPERATURE PULSED OPERATION;

QUANTUM WELL LASERS;

EID: 0032075630     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19980759     Document Type: Article

References (2)

1. NAKAMURA, S., SENOH, M., NAGAHAMA, S., IWASA, N., YAMADA, T., MATSUSHITA, T., KIYOKU, H., SUOIMOTO, Y., KOZAKI, T., UMEMOTO, H., SANO, M., and CHOCHO, K.: 'InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices', Jpn. J. Appl. Phys. 2 Lett., 1997, 36, (12A), pp. L1568-L1571
2. NAKAMURA, S.: 'Characteristics of room temperature-CW operated InGaN multi-quantum-well-structure laser diodes', MRS Internet J. Nitride Semicond. Res., 1997, 2, (5)