Room-temperature continuous-wave operation of GaInN/GaN multiquantum well laser diode

Electronics Letters

Volumn 34, Issue 15, 1998, Pages 1494-1495

  Kobayashi, T ^a   Nakamura, F ^a   Naganuma, K ^a   Tojyo, T ^a   Nakajima, H ^a   Asatsuma, T ^a   Kawai, H ^a   Ikeda, M ^a  

^a SONY CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS WAVE LASERS; CURRENT DENSITY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; STIMULATED EMISSION;

GALLIUM INDIUM NITRIDE; GALLIUM NITRIDE; THRESHOLD CURRENT DENSITY;

QUANTUM WELL LASERS;

EID: 0032118239     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19981063     Document Type: Article

References (3)

1. NAKAMURA, F., SENOH, M., NAGAHARA, S., IWASA, N., YAMADA, T., MATSUSHITA, T., KIYOKU, H., SUGIMOTO, Y., KOZAKI, T., UMEMOTO, H., SANO, M., and CHOCHO, K.: 'InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices', Jpn. J. Appl. Phys., 1997, 36, pp. L1568-1571
2. NAKAMURA, F., KOBAYASHI, T., ASATSUMA, T., FUNATO, K., YANASHIMA, K., HASHIMOTO, S., NAGANUMA, K., TOMIOKA, S., MIYAJIMA, T., MORITA, E., KAWAI, H., and IKEDA, M.: 'Room-temperature pulsed operation of GaInN multiple-quantum-well laser diode with optimized well number'. Proc. Second Int. Conf. Nitride Semiconductors (ICNS-2), Tokushima, Japan, 1997, Paper LN-8
3. NAKAMURA, F., KOBAYASHI, T., TOJYO, T., ASATSUMA, T., NAGANUMA, K., KAWAI, H., and IKEDA, M.: 'Room-temperature pulsed operation of a GaInN multiple-quantum-well laser diode', Electron Lett., 1998, 34, (11), pp. 1105-1107