High quality epitaxial Si grown by a simple low pressure chemical vapor deposition at 550 °C

Applied Physics Letters

Volumn 69, Issue 11, 1996, Pages 1617-1619

  Chin, Albert ^a   Lin, B C ^a   Chen, W J ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL FORMOSA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0344592363     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.117049     Document Type: Article

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