2-D MOSFET modeling including surface effects and impact ionization by self-consistent solution of the boltzmann, poisson, and hole-continuity equations

IEEE Transactions on Electron Devices

Volumn 44, Issue 2, 1997, Pages 257-267

  Liang, Wenchao ^a,b   Goldsman, Neil ^a   Mayergoyz, Isaak ^a   Oldiges, Phil J ^a  

^a UNIVERSITY OF MARYLAND   (United States)

^b HEWLETT PACKARD COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRON TRANSPORT PROPERTIES; MATHEMATICAL TECHNIQUES; MONTE CARLO METHODS; TEMPERATURE;

BOLTZMANN TRANSPORT EQUATION; ELECTRON DISTRIBUTION; HOLE CURRENT CONTINUITY EQUATION; POISSON EQUATION; SPHERICAL HARMONIC METHOD;

MOSFET DEVICES;

EID: 0031079523     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.557713     Document Type: Article

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