The dopant density and temperature dependence of electron mobility and resistivity in n-type silicon

Solid State Electronics

Volumn 20, Issue 7, 1977, Pages 609-616

  Li, Sheng S ^a   Thurder, W Robert ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING SILICON;

EID: 0017509076     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(77)90100-9     Document Type: Article

References (33)

1. Electron Mobility in Ge, Si, and GaP
2. Transport Properties of a Many-Valley Semiconductor
3. XCIV. Scattering of electrons and holes by charged donors and acceptors in semiconductors
4. Resistivity of Bulk Silicon and of Diffused Layers in Silicon
5. Electrical Properties of Heavily Doped Silicon
6. Semiconductor Measurement Technology
7. A planar four-probe test structure for measuring bulk resistivity
8. Semiconductor Measurement Technology
9. Carrier mobilities in silicon empirically related to doping and field
10. Thermally Stimulated Properties
11. Semiconductor Measurement Technology