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3
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0022986540
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Performance and reliability of thin gate dielectrics for VLSI: Materials and processing perspective
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Singh R. Performance and reliability of thin gate dielectrics for VLSI: Materials and processing perspective. Mat Res Soc 1986;71:519-24.
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Mat Res Soc
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Singh, R.1
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Review of conductor-insulator-semiconductor solar cells
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Singh R, Green MA, Rajkanan K. Review of conductor-insulator-semiconductor solar cells. Sol Cells 1981;3:95-148.
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Sol Cells
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Singh, R.1
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0030212001
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1.5nm direct-tunneling gate oxide Si MOSFETs
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Momose HS, Ono M, Yoshitomi T, Ohguro T, Nakamura S, Saito M, Iwai H. 1.5nm direct-tunneling gate oxide Si MOSFETs. IEEE Trans Electron Devices 1996;43:1233-42.
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The effect of subtractive defects and grain size on VLSI interconnect early failures
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Menon SS, Poole KF. The effect of subtractive defects and grain size on VLSI interconnect early failures. Thin Solid Films 1992;220:24-9.
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Poole KF. Personal Communications, 1998.
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Poole, K.F.1
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Silicon wafer thermal processing: 300 nm issues
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Huff HR, Goodall RK, Nikon RH, Griffiths SK. Silicon wafer thermal processing: 300 nm issues, 191st Electrochemical Society meeting, May 5-9, 1996. In: ECS Ext Abst. 1997, 97-1. 745-7.
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Huff, H.R.1
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11
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0343336671
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New process for junction formation in compound semiconductors
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Singh R. New process for junction formation in compound semiconductors. Semicond Intl 1986;9(1):28-9.
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Semicond Intl
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Singh, R.1
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Rapid isothermal processing
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Singh R. Rapid isothermal processing. J Appl Phys 1988;63:R59-R118.
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J Appl Phys
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Singh, R.1
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Rapid photothermal processing
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Singh R, Sharangpani R. Rapid photothermal processing. Solid State Tech. 1997:40(10);193-8.
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Solid State Tech.
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Singh, R.1
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16
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0031257336
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Role of high energy photons in dual spectral sources rapid isothermal CVD
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Singh R, Chen Y. Role of high energy photons in dual spectral sources rapid isothermal CVD. J Electron Mat 1997;26:1184-8.
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J Electron Mat
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Singh, R.1
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17
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85034278626
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Rapid photothermal processing assisted metalorganic chemical vapor deposition of barium strontium titanate
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in review
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Chen Y, Singh R. Rapid photothermal processing assisted metalorganic chemical vapor deposition of barium strontium titanate. J Electrochem Soc (in review).
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J Electrochem Soc
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Chen, Y.1
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18
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0001682791
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Deposition of high dielectric constant materials by dual spectral sources assisted metalorganic chemical vapor deposition
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Singh R, Alamgir S, Sharangpani R. Deposition of high dielectric constant materials by dual spectral sources assisted metalorganic chemical vapor deposition. Appl Phys Lett 1995;67:3939.
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Appl Phys Lett
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Singh, R.1
Alamgir, S.2
Sharangpani, R.3
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19
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0005891131
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Low temperature shallow junction formation using vacuum ultraviolet photons during rapid thermal processing
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Singh R, Cherukuri KC, Vedula L, Rohatgi A, Narayanan S. Low temperature shallow junction formation using vacuum ultraviolet photons during rapid thermal processing. Appl Phys Lett 1997;70:1700-2.
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Appl Phys Lett
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Singh, R.1
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Vedula, L.3
Rohatgi, A.4
Narayanan, S.5
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20
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0000521933
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A computerized direct liquid injection based rapid isothermal processing assisted chemical vapor deposition system for Teflon amorphous fluoropolymer
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Sharangpani R, Singh R. A computerized direct liquid injection based rapid isothermal processing assisted chemical vapor deposition system for Teflon amorphous fluoropolymer. Rev Scient Instr 1997;68:1564-70.
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Rev Scient Instr
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Sharangpani, R.1
Singh, R.2
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21
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0031122836
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Chemical vapor deposition and characterization of Teflon amorphous fluoropolymer thin films
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Sharangpani R, Singh R, Drews M, Ivey K. Chemical vapor deposition and characterization of Teflon amorphous fluoropolymer thin films. J Electron Mat 1997;26:402-9.
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J Electron Mat
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Sharangpani, R.1
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22
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0039291789
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Hollaway P, McGuire G, editors. Park Ridge, NJ: Noyce Publications
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Singh R. Handbook of compound semiconductors. Hollaway P, McGuire G, editors. Park Ridge, NJ: Noyce Publications, 1995:442-517.
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Handbook of Compound Semiconductors
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Singh, R.1
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23
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0032026142
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Low temperature copper using an inductively coupled plasma with ultraviolet light irradiation
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Choi KS, Han CH. Low temperature copper using an inductively coupled plasma with ultraviolet light irradiation. J Electrochem Soc 1998;145:L37-9.
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J Electrochem Soc
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Choi, K.S.1
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24
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0032026492
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Role of rapid photothermal processing in process integration
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Singh R, Nimmagadda S, Parihar V, Chen Y, Poole KF. Role of rapid photothermal processing in process integration. IEEE Trans Electron Devices 1998;45:643-54.
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IEEE Trans Electron Devices
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25
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85034282741
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Importance of rapid photothermal processing in defect reduction and process integration
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in review
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Singh R, Parihar V, Nimmagadda VS, Chen Y, Poole KF, Vedula L. Importance of rapid photothermal processing in defect reduction and process integration. IEEE Trans Sem Mfg (in review).
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IEEE Trans Sem Mfg
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Singh, R.1
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Poole, K.F.5
Vedula, L.6
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26
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3843063326
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Role of rapid photothermal processing in environmentally conscious semiconductor manufacturing
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Sharangpani R, Singh R. Role of rapid photothermal processing in environmentally conscious semiconductor manufacturing. J Mat Res 1998;12:61-7.
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J Mat Res
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