In0.38Ga0.62As/InAlGaAs/InGaP strained double quantum well lasers on In0.21GaO.79As ternary substrate

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 35, Issue 6 B, 1996, Pages

  Shoji, H ^a   Otsubo, K ^a   Kusunoki, T ^a   Suzuki, T ^a   Uchida, T ^a   Ishikawa, H ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; FABRICATION; SEMICONDUCTOR LASERS; SUBSTRATES; TEMPERATURE DISTRIBUTION; TERNARY SYSTEMS;

STRAINED QUANTUM WELL; TEMPERATURE INSENSITIVE OPERATION; TERNARY BULK;

QUANTUM WELL LASERS;

EID: 0030168256     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.l778     Document Type: Article

References (11)