|
Volumn 35, Issue 8 SUPPL. B, 1996, Pages
|
A theoretical investigation of migration potentials of Ga adatoms near step edges on GaAs(001)-c(4 × 4) surface
a b
a
NTT CORPORATION
(Japan)
|
Author keywords
c(4 4) surface; Electron counting model; Empirical interatomic potential; Ga adatom; GaAs(001); Migration potential; MOVPE; Step
|
Indexed keywords
|
EID: 0001318534
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/jjap.35.l1016 Document Type: Article |
Times cited : (14)
|
References (19)
|