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Volumn 35, Issue 8 SUPPL. B, 1996, Pages

A theoretical investigation of migration potentials of Ga adatoms near step edges on GaAs(001)-c(4 × 4) surface

Author keywords

c(4 4) surface; Electron counting model; Empirical interatomic potential; Ga adatom; GaAs(001); Migration potential; MOVPE; Step

Indexed keywords


EID: 0001318534     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.l1016     Document Type: Article
Times cited : (14)

References (19)
  • 7
    • 3843069842 scopus 로고
    • eds. H. Sakaki and H. Noge Springer-Verlag, Berlin,. Springer Series in Materials Science
    • K. Shiraishi, T. Ito and T. Ohno: Nanostructures and Quantum Effects, eds. H. Sakaki and H. Noge (Springer-Verlag, Berlin,. 1994) Springer Series in Materials Science Vol. 31, p. 294.
    • (1994) Nanostructures and Quantum Effects , vol.31 , pp. 294
    • Shiraishi, K.1    Ito, T.2    Ohno, T.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.