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Volumn 37, Issue 3 A, 1998, Pages
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Electron counting Monte Carlo simulation of the structural change of the GaAs(001)-c(4×4) surface during Ga predeposition
a
a
NTT CORPORATION
(Japan)
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Author keywords
[No Author keywords available]
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Indexed keywords
COMPUTER SIMULATION;
CRYSTAL ORIENTATION;
DEPOSITION;
DESORPTION;
MATHEMATICAL MODELS;
MONOLAYERS;
MONTE CARLO METHODS;
SURFACE STRUCTURE;
ADATOMS;
DIMERS;
ELECTRON COUNTING MODEL;
SEMICONDUCTING GALLIUM ARSENIDE;
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EID: 0032027655
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/jjap.37.l262 Document Type: Article |
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Times cited : (18)
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References (26)
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