A theoretical investigation of the potential for inter-surface migration of Ga adatoms between GaAs(001) and (111)B surfaces

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 37, Issue 5 PART A, 1998, Pages

  Ito, Tomonori ^a   Shiraishi, Kenji ^b   Kageshima, Hiroyuki ^b   Suzuki, Yasuo Y ^b  

^a NTT CORPORATION   (Japan)

^b Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

(001) (2 4) 2; (111)B (2 2); (111)B ( 19 19); Electron counting model; Empirical interatomic potential; Ga adatom; GaAs surfaces; Inter surface diffusion; Migration potential

Indexed keywords

ATOMS; CALCULATIONS; CHEMICAL BONDS; DIFFUSION; ELECTRONS; MATHEMATICAL MODELS; SEMICONDUCTING GALLIUM; SURFACES;

EMPIRICAL ATOMIC POTENTIAL; GALLIUM ADATOMS; INTER SURFACE DIFFUSION; MIGRATION POTENTIAL;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0032070915     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.l488     Document Type: Article

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