Inhibition of thickness variations during growth of InAsP/InGaP and InAsP/ InGaAsP multiquantum wells with high compensated strains

Applied Physics Letters

Volumn 69, Issue 15, 1996, Pages 2279-2281

  Patriarche, G ^a   Ougazzaden, A ^a   Glas, F ^a  

^a ORANGE LABS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000592934     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.117533     Document Type: Article

References (13)

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