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Volumn 38, Issue 5, 1990, Pages 683-686

Picosecond Optoelectronic Measurement of S Parameters and Optical Response of an AIGaAs/GaAs HBT

Author keywords

[No Author keywords available]

Indexed keywords

MICROWAVE MEASUREMENTS; OPTOELECTRONIC DEVICES;

EID: 0025430523     PISSN: 00189480     EISSN: 15579670     Source Type: Journal    
DOI: 10.1109/22.54944     Document Type: Article
Times cited : (23)

References (14)
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    • Auston, D.H.1
  • 2
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    • Picosecond optical sampling of CiaAs integrated circuits
    • K. J. Weingarten, M. J. W. Rodwell, and D. M. Bloom. “Picosecond optical sampling of CiaAs integrated circuits,” IEEE J. Quantum Electron., vol. QE-24, no. 2, pp. 198–220, 1988.
    • (1988) IEEE J. Quantum Electron. , vol.QE-24 , Issue.2 , pp. 198-220
    • Weingarten, K.J.1    Rodwell, M.J.W.2    Bloom, D.M.3
  • 3
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    • Subpicosecond electrooptic sampling: Principles and applications
    • J. A. Valdmanis and G. Mourou. “Subpicosecond electrooptic sampling: Principles and applications,” IEEE J. Quantum Electron., vol. QE-22, no. 1, pp. 69–78, 1986.
    • (1986) IEEE J. Quantum Electron. , vol.QE-22 , Issue.1 , pp. 69-78
    • Valdmanis, J.A.1    Mourou, G.2
  • 4
    • 0022593945 scopus 로고
    • Picosecond optoelectronic measurement of the high-frequency scattering parameters of a GaAs FET
    • D. E. Cooper and S. C. Moss, “Picosecond optoelectronic measurement of the high-frequency scattering parameters of a GaAs FET,” IEEE J. Quantum Electron., vol. QE-22, no. 1, pp. 94–100, 1986.
    • (1986) IEEE J. Quantum Electron. , vol.QE-22 , Issue.1 , pp. 94-100
    • Cooper, D.E.1    Moss, S.C.2
  • 5
    • 0024138910 scopus 로고
    • On wafer characterization of monolithic mil-limeter-wave integrated circuits by picosecond optical electronic technique
    • P. Polak-Dingles et al., “On wafer characterization of monolithic millimeter-wave integrated circuits by picosecond optical electronic technique,” in IEEE MTT-S Int. Microwave Symp. Dig., 1988, pp. 237–240.
    • (1988) IEEE MTT-S Int. Microwave Symp. Dig. , pp. 237-240
    • Polak-Dingles, P.1
  • 6
    • 0021487631 scopus 로고
    • A new technique for the measurement of speeds of gigahertz digital IC’s
    • R. K. Jain, D. E. Snyder, and K. Stenersen, “A new technique for the measurement of speeds of gigahertz digital IC’s,” IEEE Electron Device Utt., vol. EDL-5, no. 9, 371–373, 1984.
    • (1984) IEEE Electron Device Lett. , vol.EDL-5 , Issue.9 , pp. 371-373
    • Jain, R.K.1    Snyder, D.E.2    Stenersen, K.3
  • 7
    • 0023534804 scopus 로고
    • Heterojunction bipolar transistors for microwave and millimeter-wave integrated circuits
    • P. M. Asbeck et al., “Heterojunction bipolar transistors for microwave and millimeter-wave integrated circuits,” IEEE Trans. Microwave The - Tech., vol. MTT-35, no. 12, pp. 1462–1470, 1987.
    • (1987) IEEE Trans. Microwave Theory Tech. , vol.MTT-35 , Issue.12 , pp. 1462-1470
    • Asbeck, P.M.1
  • 8
    • 0024168949 scopus 로고
    • High-performance GaAs heterojunction bipolar transistor logarithmic IF amplifier
    • A. K. Oki, M. E. Kim, G. M. Gorman, and J. B. Camou, “High-performance GaAs heterojunction bipolar transistor logarithmic IF amplifier,” IEEE Trans. Microwave Theory Tech., vol. 36, no. 12, pp. 1958–1965, 1988.
    • (1988) IEEE Trans. Microwave Theory Tech. , vol.36 , Issue.12 , pp. 1958-1965
    • Oki, A.K.1    Kim, M.E.2    Gorman, G.M.3    Camou, J.B.4
  • 9
    • 0024133267 scopus 로고
    • Linearity of response of ultrafast photoconductive switches: critical dependence upon ion-implantation and fabrication condition
    • S. C. Moss, J. F. Knudsen, and D. D. Smith, “Linearity of response of ultrafast photoconductive switches: critical dependence upon ion-implantation and fabrication condition,” J. Modern Opt., vol. 35, no. 12, pp. 2007–2030. 1988.
    • (1988) J. Modern Opt. , vol.35 , Issue.12 , pp. 2007-2030
    • Moss, S.C.1    Knudsen, J.F.2    Smith, D.D.3
  • 10
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    • Picosecond optoelectronic measurement of microstrip dispersion
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  • 12
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    • Microwave performance of an optically controlled AlGaAs/GaAs high electron mobility transistor and GaAs MESFET
    • R. N. Simons, “Microwave performance of an optically controlled AlGaAs/GaAs high electron mobility transistor and GaAs MESFET,” IEEE Trans. Microwave Theory Tech., vol. MTT-35, no. 12, pp. 1444-1455, 1987.
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  • 13
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    • Picosecond optical electronic sampling: Characterization of high-speed photodetectors
    • D. H. Auston and P. R. Smith, “Picosecond optical electronic sampling: Characterization of high-speed photodetectors,” Appl. Phys. Lett., vol. 41, no. 7, 599–601, 1982.
    • (1982) Appl. Phys. Lett. , vol.41 , Issue.7 , pp. 599-601
    • Auston, D.H.1    Smith, P.R.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.