Electron‐beam test system for high‐speed devices

Scanning

Volumn 9, Issue 5, 1987, Pages 201-204

  Brunner, M ^a   Winkler, D ^b   Schmitt, R ^a   Lischke, B ^a  

^a SIEMENS AG   (Germany)

^b UNIVERSITY OF TÜBINGEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84983951936     PISSN: 01610457     EISSN: 19328745     Source Type: Journal    
DOI: 10.1002/sca.4950090504     Document Type: Article

References (19)

1. Electron beam testing: methods and applications
2. Waveform measurements on gigahertz semiconductor devices by scanning electron microscope stroboscopy
3. Analysis of the transit time effect on the stroboscopic voltage contrast in the scanning electron microscope
4. Magnetic field extraction of secondary electrons for accurate integrated circuit voltage measurement
5. Gigahertz stroboscopy with the scanning electron microscope
6. Electron‐optical instrumentation for dynamic E‐beam testing of integrated circuits
7. In‐the‐lens secondary electron analyzer for IC internal voltage measurements with electron beams
8. Electron beam chopping systems in the SEM
9. Fundamentals of electron beam testing of integrated circuits
10. Voltage measurements inside integrated circuits using mechanical and electron probes
11. Calculation of fields and secondary electron trajectories in a new in‐lens spectrometer for electron beam testing
12. Elektronenstrahl‐Potentialmeßtechnik
13. E‐Beam testing of high‐speed electronic devices
14. Electron beam testing