Identification of gate electrode discontinuities in submicron CMOS technologies, and effect on circuit performance

IEEE Transactions on Electron Devices

Volumn 43, Issue 5, 1996, Pages 759-765

  Jenkins, Keith A ^b   Burghartz, Joachim N ^a,b   Agnello, Paul D ^a,b,c  

^a IEEE

^b IBM T J WATSON RESEARCH CENTER   (United States)

^c IBM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CONDUCTIVITY; ELECTRIC IMPEDANCE; ELECTRIC IMPEDANCE MEASUREMENT; ELECTRIC RESISTANCE; ELECTRODES; GATES (TRANSISTOR); PERFORMANCE;

CIRCUIT SPEED; GATE ELECTRODE DISCONTINUITY; GATE ELECTRODES; HIGH FREQUENCY METHOD; PARTIAL DISCONTINUITY; SHEET RESISTANCE; SUBMICRON CMOS TECHNOLOGY;

CMOS INTEGRATED CIRCUITS;

EID: 0030150047     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.491253     Document Type: Article

References (12)

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