On-chip picosecond time-domain measurement of silicon bipolar transistor characteristics using integrated GaAs photoconductive devices

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 1991-January, Issue , 1991, Pages 37-40

  Anderson, G D ^a   Dutton, R W ^a   Morse, J D ^b   Mariella, R P ^b  

^a STANFORD UNIVERSITY   (United States)

^b LAWRENCE LIVERMORE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DECONVOLUTION; ELECTRON DEVICES; GALLIUM ARSENIDE; MOLECULAR BEAM EPITAXY; OPTICAL SWITCHES; PHOTOCONDUCTIVE SWITCHES; PHOTOCONDUCTIVITY; SEMICONDUCTING GALLIUM; SILICON; TEMPERATURE; TIME SWITCHES;

GAAS PHOTOCONDUCTIVE SWITCH; GROWTH TECHNIQUES; HIGH-SPEED DEVICES; LOW TEMPERATURE MBE; PHOTOCONDUCTIVE DEVICES; PICOSECOND TIME DOMAIN; SILICON BIPOLAR TRANSISTORS; SILICON STRUCTURES;

TIME DOMAIN ANALYSIS;

EID: 84954194122     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1991.235429     Document Type: Conference Paper

References (0)