Effects of internal loss on power efficiency of mid-infrared InAs-GaInSb-AlSb quantum-well lasers and comparison with InAsSb lasers

IEEE Journal of Quantum Electronics

Volumn 34, Issue 6, 1998, Pages 1016-1030

  Le, H Q ^a   Lin, C H ^b,c   Murray, S J ^b   Yang, R Q ^b   Pei, S S ^b  

^a MIT LINCOLN LABORATORY   (United States)

^b UNIVERSITY OF HOUSTON   (United States)

^c APPLIED OPTOELECTRONICS INC   (United States)

Author keywords

Laser efficiency; Laser internal loss; Mid infrared lasers; Narrow gap semiconductors; Quantum well lasers; Semiconductor lasers

Indexed keywords

CHARGE CARRIERS; ENERGY GAP; LIGHT ABSORPTION; LIGHT REFLECTION; QUANTUM EFFICIENCY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS;

LASER EFFICIENCY; LASER INTERNAL LOSS COEFFICIENTS; MID INFRARED LASERS;

QUANTUM WELL LASERS;

EID: 0032095298     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.678598     Document Type: Review

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