Turn-key, liquid-nitrogen-cooled 3.9μm semiconductor laser package with 0.2W CW output

Electronics Letters

Volumn 32, Issue 25, 1996, Pages 2359-2360

  Le, H Q ^a   Turner, G W ^a   Ochoa, J R ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Semiconductor junction lasers

Indexed keywords

CONTINUOUS WAVE LASERS; ELECTRONICS PACKAGING; OPTICAL COLLIMATORS; OPTICAL PUMPING; QUANTUM EFFICIENCY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS;

COLLIMATED BEAMS;

SEMICONDUCTOR LASERS;

EID: 0030571395     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19961556     Document Type: Article

References (10)

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3. CHOI, H.K., TURNER, G.W., and LE, H.Q.: 'GaSb-based semiconductor lasers in the 4μm band' in RENO, J.L. (Ed.): 'Proc. Int. Conf. Narrow Gap Semiconductors' (Institute of Physics Publishing, 1995), pp. 17
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