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Applied Physics Letters

Volumn 71, Issue 6, 1997, Pages 735-737

Observation of room-temperature laser emission from type III InAs/GaSb multiple quantum well structures

(6) Baranov, A N a Bertru, N a Cuminal, Y a Boissier, G a Alibert, C a Joullie A a

a UNIVERSITÉ MONTPELLIER II (France)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CHEMICAL BONDS; CRYSTAL DEFECTS; ELECTROLUMINESCENCE; ELECTRON ENERGY LEVELS; ELECTRON TUNNELING; HETEROJUNCTIONS; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; OPTICAL VARIABLES MEASUREMENT; QUANTUM WELL LASERS; SEMICONDUCTOR QUANTUM WELLS;

EMISSION WAVELENGTH; GALLIUM ANTIMONIDE; INDIUM ARSENIDE; ROOM TEMPERATURE LASER EMISSION; TRAP RECOMBINATION;

LIGHT EMISSION;

EID: 0031210360 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.119629 Document Type: Article

Times cited : (56)

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