External cavity mid-infrared semiconductor lasers

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3001, Issue , 1997, Pages 298-308

  Le, Han Q ^a   Turner, George W ^a   Ochoa, Juan R ^a   Manfra, M J ^a   Cook, Christopher C ^a   Zhang, Yong Hang ^b  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^b Arizona State University   (United States)

Author keywords

External cavity lasers; GaSb; InAs; Mid infrared; Semiconductor lasers; Spectroscopic instrument; Tunable lasers

Indexed keywords

ELECTRIC CONDUCTIVITY; GALLIUM ALLOYS; HETEROJUNCTIONS; INDIUM ARSENIDE; INFRARED DEVICES; LASER TUNING; LASERS; OPTICAL WAVEGUIDES; SEMICONDUCTING INDIUM; SEMICONDUCTOR MATERIALS; THICKNESS MEASUREMENT; TUNING; CAVITY RESONATORS; DESIGN; INFRARED RADIATION; LASER MODES; OPTIMIZATION; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS;

EXTERNAL CAVITY LASERS; GASB; INAS; MID-INFRARED; SPECTROSCOPIC INSTRUMENT; TUNABLE LASERS; BAND-EDGE WAVELENGTHS; MID INFRARED LASERS;

SEMICONDUCTOR LASERS;

EID: 0031373529     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.273799     Document Type: Conference Paper

References (20)

1. H. Q. Le, G. W. Turner, J. R. Ochoa, H. K. Choi, J. M. Arias, M. Zandian, R. R. Zucca, and Y.-Z. Liu in "High-power diode-pumped mid-infrared semiconductor lasers" Proceeding of SPIE, Vol. 2382: "Laser diodes and applications" Ed. by K. J. Linden, 262 (1995).
2. G. W. Turner, H. K. Choi, and H. Q. Le , J. Vac. Sci. Technol. B 13, 699 (1995).
3. Y.-H. Zhang and H. Q. Le CLEO/QELS 95, paper JWE3, Baltimore, MD (1995);
4. Y.-H. Zhang, Appl. Phys. Lett. 66, 118 (1995).
5. H. K. Choi, G. W. Turner, and H. Q. Le, in "Proceedings of the International Conference on Narrow Gap Semiconductors", Ed. by J. L. Reno, Institute of Physics Publishing, London, 1 (1995).
6. H. Lee, P. K. York, R. J. Menna, R. U. Martinelli, D. Z. Garbuzov, S. Y. Narayan, and J. C. Connolly, Appl. Phys. Lett. 66, 1942 (1995).
7. T. C. Hasenberg, D. H. Chow, A. R. Kost, R. H. Miles, and L. West, Electron. Lett. 31, 275 (1995);
8. R. H. Miles, D. H. Chow, Y.-H. Zhang, P. D. Brewer, and R. G. Wilson, Appl. Phys. Lett. 66, 1921 (1995).
9. J. Faist, F. Capassso, C. Sirtori, A. L. Hutchinson, and A. Y. Cho, Appl. Phys. Lett. 66, 538 (1995).
10. S. R. Kurtz, R. M. Biefeld, L.R. Dawson, K. C. Baucom, and A. J. Howard, Appl. Phys. Lett. 64, 812 (1994).
11. E. Tournie, P. Grunberg, C. Fouillant, S. Kadret, G. Boissier, A. Baranov, A. Joullie, E. Gaumont-Goarin, and K.H. Ploog, Electron. Lett. 29, 1255 (1993).
12. M. Aydaraliev, N. V. Zotova, S. A. Karandashov, B. A. Matveev, N. M. Stus', and G. N. Talalakin, Semicond. Sci. Technol. 8, 1575 (1993).
13. J. L. Malin, J. R. Meyer, C. L. Felix, C. A. Hoffman, L. Goldberg, F. J. Bartoli, C.-H. Lin, P. C. Chang, S. J. Murry, R. Q. Yang, and S. -S. Pei, Appl. Phys. Lett. 68, 2976 (1996).
14. Z. Shi, M. Tacke, A. Lambrecht, and H. Böttner, Appl. Phys. Lett. 66, 2537 (1995).
15. Z. Feit, D. Kostyk, R. J. Woods, and P. Mak, Appl. Phys. Lett. 58, 343 (1991).
16. M. Zandian, J. M. Arias, R. Zucca, R. V. Gil, and S. H. Shin, Appl. Phys. Lett. 59, 1022 (1991).
17. H. Q. Le, G. W. Turner, J. R. Ochoa, M. J. Manfra, C. C. Cook, and Y.-H. Zhang, Appl. Phys. Lett. 69, (1996).
18. H. Q. Le, W. D. Goodhue, and S. Di Cecca, Appl. Phys. Lett. 60, 1280 (1992).
19. I. M. Tsidilkovski, "Band Structures of Semiconductors", Pergamon Press, Oxford, (1982).
20. H. C. Casey, Jr. and M. B. Panish, "Heterostructure Lasers", Part A, Academic Press, New York (1978).