Room-temperature low-threshold type-II quantum-well lasers at 4.5 μm

IEEE Photonics Technology Letters

Volumn 9, Issue 12, 1997, Pages 1573-1575

  Lin, Chih Hsiang ^a   Yang, Rui Q ^a   Murry, S J ^a   Pei, S S ^a   Yan, Chi ^b   McDaniel Jr , D L ^c   Falcon, M ^c  

^a UNIVERSITY OF HOUSTON   (United States)

^b BOEING COMPANY   (United States)

^c AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

Aluminum materials devices; Continuous wave (CW) lasers; Epitaxial growth; Gallium materials devices; Quantum well lasers; Semiconductor lasers

Indexed keywords

CONTINUOUS WAVE LASERS; EPITAXIAL GROWTH; OPTICALLY PUMPED LASERS; QUANTUM EFFICIENCY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS;

THRESHOLD POWER;

QUANTUM WELL LASERS;

EID: 0031358690     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.643265     Document Type: Article

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