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Volumn 9, Issue 11, 1997, Pages 1433-1435

Interband cascade laser emitting >1 photon per injected electron

Author keywords

Pulsed lasers; Quantum well lasers; Semiconductor lasers; Semiconductor superlattices; Tunnel devices effects

Indexed keywords

CURRENT DENSITY; HIGH TEMPERATURE EFFECTS; LASER PULSES; LIGHT EMISSION; PHOTONS; QUANTUM EFFICIENCY; SEMICONDUCTOR SUPERLATTICES;

EID: 0031271109     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.634699     Document Type: Article
Times cited : (66)

References (16)
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    • InAsSbP-InAsSb-InAs diode lasers emitting at 3.2 μm grown by metal-organic chemical vapor deposition
    • D. Wu, E. Kaas, J. Diaz, B. Lane, A. Rybaltowski, H. J. Yi, and M. Razeghi, "InAsSbP-InAsSb-InAs diode lasers emitting at 3.2 μm grown by metal-organic chemical vapor deposition," IEEE Photon. Technol. Lett., vol. 9, p. 173, 1997.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.