0.1 μm-gate InGaP/lnGaAs HEMT Technology for millimeter-wave applications

IEICE Transactions on Electronics

Volumn E81-C, Issue 6, 1998, Pages 876-879

  Harada, Naoki ^a   Saito, Tamio ^a   Oikawa, Hideyuki ^a   Ohashi, Yoji ^a   Awano, Yuji ^a   Abe, Masayuki ^a   Hikosaka, Kohki ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

HEMT; Ingap; Low noise amplifier; MMIC; Nun wave

Indexed keywords

BROADBAND AMPLIFIERS; ETCHING; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; PHOTOLITHOGRAPHY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SUBSTRATES;

LOW NOISE AMPLIFIERS (LNA);

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0032094032     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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