High-Gain, V-Band, Low-Noise MMIC Amplifiers Using Pseudomorphic MODFET’s

IEEE Electron Device Letters

Volumn 11, Issue 1, 1990, Pages 24-26

  Metze, George M ^a   Bass, J F ^a   Lee, Timothy T ^a   Cornfeld, A B ^a   Singer, J L ^a   Hung, Hing Loi ^a   Huang, Ho Chung ^a   Pande, Krishna P ^a  

^a Image Processing Department   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIERS; SEMICONDUCTOR DEVICES--APPLICATIONS; TRANSISTORS, FIELD EFFECT--APPLICATIONS;

LOW NOISE AMPLIFIER (LNA); MAXIMUM GAIN BIAS; MMIC AMPLIFIERS; MODULATION DOPED FET; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; PSEUDOMORPHIC MODFETS;

INTEGRATED CIRCUITS, MONOLITHIC;

EID: 0025208487     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.46919     Document Type: Article

References (9)

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9. J. J. Rosenberg et al., “An InGaAs/GaAs pseudomorphic single quantum well HEMT,” IEEE Electron Device Lett., vol. EDL-6, pp. 628–630, Dec. 1985.