Single-bias diode-regulated 60 GHz monolithic LNA

IEEE MTT-S International Microwave Symposium Digest

Volumn 2, Issue , 1997, Pages 443-446

  Maruhashi, K ^a   Ohata, K ^a   Madihian, M ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GAIN MEASUREMENT; INTEGRATED CIRCUIT LAYOUT; JUNCTION GATE FIELD EFFECT TRANSISTORS; MILLIMETER WAVE DEVICES; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SEMICONDUCTING GALLIUM ARSENIDE; SPURIOUS SIGNAL NOISE;

LOW NOISE AMPLIFIERS (LNA); NOISE FIGURE; SELF BIAS CIRCUIT;

DIODE AMPLIFIERS;

EID: 0030649255     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)