V-band GaAs MMIC chip set on a highly reliable WSi/Au refractory gate process

IEEE MTT-S International Microwave Symposium Digest

Volumn 1, Issue , 1997, Pages 247-250

  Mizoe, J ^a   Matsumura, T ^a   Unosawa, K ^a   Akiba, Y ^a   Nagai, K ^a   Sato, H ^a   Saryo, T ^a   Inoue, T ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GATES (TRANSISTOR); GOLD; JUNCTION GATE FIELD EFFECT TRANSISTORS; RADIO RECEIVERS; RADIO TRANSMITTERS; SEMICONDUCTING GALLIUM ARSENIDE; TUNGSTEN ALLOYS;

HETEROJUNCTION FIELD EFFECT TRANSISTORS (HJFET); REFRACTORY GATE PROCESS;

MONOLITHIC MICROWAVE INTEGRATED CIRCUITS;

EID: 0030719760     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)