Pseudomorphic N-InGaP/InGaAs/GaAs High Electron Mobility Transistors for Low-Noise Amplifiers

IEEE Electron Device Letters

Volumn 14, Issue 8, 1993, Pages 406-408

  Takikawa, Masahiko ^a   Joshin, Kazukiyo ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIERS (ELECTRONIC); CHARGE CARRIERS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS;

CARRIER CONFINEMENT; LOW-NOISE AMPLIFIERS; NOISE FIGURE; SHORT-CHANNEL EFFECTS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0027642194     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.225594     Document Type: Article

References (12)

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