60-GHz Pseudomorphic-MODFET Low-Noise MMIC Amplifiers

IEEE Electron Device Letters

Volumn 10, Issue 4, 1989, Pages 165-167

  Metze, G M ^a   Cornfeld, A ^a   Carlson, E ^a   Dahrooge, G ^a   Chang, E ^a   Singer, J ^a   Bass, J ^a   Hung, Hing Loi ^a   Lee, Timothy ^a  

^a Image Processing Department   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIERS, MICROWAVE; TRANSISTORS, FIELD EFFECT;

LOW-NOISE MMIC AMPLIFIERS; PSEUDOMORPHIC MODFET;

INTEGRATED CIRCUITS, MONOLITHIC;

EID: 3643143199     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.31705     Document Type: Article

References (6)

1. B. Kim, H. M. Macksey, H. Q. Tserng, H. D. Shih, and N. Camilleri, “MM-wave monolithic GaAs power FET amplifier,” Microwave J., pp. 153–162, Mar. 1987.
2. H. L. A. Hung et al., “60-GHz GaAs MMIC low-noise amplifiers,” in Proc. IEEE Microwave and Millimeter-Wave Monolithic Circuits Symp., May 1988, pp. 87–90.
3. J. Berenz et al., “44-GHz monolithic low-noise amplifier,” in Proc. IEEE Microwave and Millimeter-Wave Monolithic Circuits Symp., June 1987, pp. 15–18.
4. J. Yonaki et al., “A Q-band monolithic three-stage amplifier,” in Proc. IEEE Microwave and Millimeter Wave Monolithic Circuits Symp., May 1988, pp. 91–94.
5. J. J. Rosenberg, M. Benlamri, P. D. Kirchner, J. M. Woodall, and G. D. Pettit, “An InGaAs/GaAs pseudomorphic single quantum well HEMT,” IEEE Electron Device Lett., vol. EDL-6, pp. 628–630, Dec. 1985.
6. A. Ketterson et al., “High transconductance InGaAs/AlGaAs pseudomorphic MODFET’s,” IEEE Electron Device Lett., vol. EDL-6, pp. 628–630, 1985.