A Model for the Time- and Bias-Dependence of p-MOSFET Degradation

IEEE Transactions on Electron Devices

Volumn 41, Issue 7, 1994, Pages 1184-1196

  Brox, Martin ^a   Wang, Qin ^b   Schwerin, Andreas ^c   Weber, Werner ^c  

^a IBM   (United States)

^b EPCOS AG   (Germany)

^c SIEMENS AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; DEGRADATION; ELECTRIC CURRENTS; ELECTRON TRANSPORT PROPERTIES; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR JUNCTIONS;

BIAS DEPENDENCE; DRAIN; ELECTRON TRAPPING; LOGARITHMIC GROWTH; TIME DEPENDENCE;

MOSFET DEVICES;

EID: 0028466692     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.293346     Document Type: Article

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