Suspended SOI structure for advanced 0.1-μm CMOS RF devices

IEEE Transactions on Electron Devices

Volumn 45, Issue 5, 1998, Pages 1039-1046

  Hisamoto, Digh ^a   Tanaka, Satoshi ^a   Tanimoto, Takuma ^a   Kimura, ShiN'Ichiro ^a  

^a HITACHI LTD   (Japan)

Author keywords

CMOS; RF device; SOI; Suspended structure

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; ELECTRIC INDUCTORS; NATURAL FREQUENCIES; SEMICONDUCTOR DEVICE STRUCTURES; SILICON WAFERS; ULSI CIRCUITS;

ETCHING STOPPER; RADIO FREQUENCY (RF) DEVICES;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0032070736     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.669522     Document Type: Article

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