High-Q inductors in standard silicon interconnect technology and its application to an integrated RF power amplifier

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1995, Pages 1015-1016

  Burghartz, Joachim N ^a   Soyuer, Mehmet ^a   Jenkins, Keith A ^a   Hulvey, Michael D ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; CAPACITORS; CMOS INTEGRATED CIRCUITS; ELECTRIC NETWORK SYNTHESIS; ELECTRIC RESISTANCE; PERFORMANCE; POWER AMPLIFIERS; Q FACTOR MEASUREMENT; SEMICONDUCTING SILICON; SUBSTRATES;

HIGH Q INTEGRATED INDUCTORS; MULTI LEVEL INTERCONNECTS; SILICON INTERCONNECT TECHNOLOGY;

ELECTRIC INDUCTORS;

EID: 0029518393     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)