A Deep-Submicrometer Microwave/Digital CMOS/SOS Technology

IEEE Electron Device Letters

Volumn 12, Issue 1, 1991, Pages 16-17

  Schmitz, Adele E ^a   Walden, Robert H ^a   Larson, Lawrence E ^a   Rosenbaum, Steven E ^a   Metzger, Robert A ^a   Behnke, John R ^a   Macdonald, Perry A ^a  

^a Hughes Aircraft Co   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE--SILICON ON SAPPHIRE TECHNOLOGY; SEMICONDUCTOR DEVICES, MOSFET;

POLYSILICON;

INTEGRATED CIRCUITS, CMOS;

EID: 0026046773     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.75683     Document Type: Article

References (14)

1. W. Cady and S. P. Yu, “A SOS MESFET microwave amplifier,” in IEDM Tech. Dig., Dec. 1979, p. 678.
2. R. J. Naster, Y. C. Hwang, and S. Zaidel, “Silicon-on-sapphire monolithic microwave IC’s,” in ISSCC Dig. Tech. Papers, Feb. 1981, p. 72.
3. D. Laighton, J. Sasonoff, and J. Selin, “Silicon-on-sapphire (SOS) monolithic transceiver module components for L- and S-band,” in IEEE MTT-S Int. Microwave Symp. Dig. Tech. Papers, June 1981, p. 37.
4. S. P. Yu and J. R. Eshbach, “SOS MESFET’s for monolithic microwave IC’s,” in ISSCC Dig. Tech. Papers, Feb. 1982, p. 132.
5. J. Nulman and J. P. Krusins, “2-GHz 150 μW self-aligned Si MESFET logic,” IEEE Electron Device Lett., vol. EDL-5, p. 159, May 1984.
6. M. Banu, “MOS oscillators with multi-decade tuning range and gigahertz maximum speed,” IEEE J. Solid-State Circuits, vol. 23, pp. 1386, Dec. 1988.
7. H. I. Cong et. al., “Multigigahertz CMOS dual-modulus prescalar IC,” IEEE J. Solid-State Circuits, vol. 23, pp. 1189, Oct. 1988.
8. L. Manchanda, S. J. Hillenius, W. T. Lynch, and H. I. Cong, “A high-performance directly insertable self-aligned ultra-radiation-hard and enhanced isolation field-oxide technology for gigahertz Si-CMOS VLSI,” IEEE Electron Device Lett., vol. 10, 17, Jan. 1989.
9. I. Bahl and P. Bhartia, Microwave Solid State Circuit Design, R. J. Trew, ed. New York: Wiley, 1988, ch. 7, p. 348.
10. D. C. Mayer, P. K. Vasudev, A. E. Schmitz, and R. E. Kastris, “A high-speed submicrometer CMOS/SOS process in SPEAR material,” in IEDM Tech. Dig., Dec. 1985, p. 676.
11. J. Warnock et. al., “A 27 GHz 20 ps PNP technology,” in IEDM Tech. Dig., Dec. 1989, p. 903.
12. T. I. Kamins et. al., “High frequency Si/Si1-xGex heterojunction bipolar transistors,” in IEDM Tech. Dig., Dec. 1989, p. 647.
13. G. G. Shahidi, D. A. Antoniadis, and H. I. Smith, “Electron velocity overshoot at 300 K and 77 K in silicon MOSFET’s with submicron channel lengths,” in IEDM Tech. Dig., Dec. 1986, p. 824.
14. R. H. Walden, A. E. Schmitz, A. R. Kramer, L. E. Larson, and J. Pasiecznik, “A deep-submicrometer analog-to-digital converter using focused-ion-beam implants,” IEEE J. Solid-State Circuits, vol. 25, pp. 562, Apr. 1990.