Advantage of small geometry silicon MOSFETs for high-frequency analog applications under low power supply voltage of 0.5V

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1995, Pages 71-72

  Saito, M ^a   Ono, M ^a   Fujimoto, R ^a   Takahashi, C ^a   Tanimoto, H ^a   Ito, N ^a   Ohguro, T ^a   Yoshitomi, T ^a   Momose, H S ^a   Iwai, H ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENTS; GATES (TRANSISTOR); GEOMETRY; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SIGNAL TO NOISE RATIO;

DRAIN CURRENT; HIGH-FREQUENCY ANALOG APPLICATIONS; LOW NOISE FIGURE; LOW POWER SUPPLY VOLTAGE OPERATION; SILICON BIPOLAR TRANSISTORS; TRANSISTOR SIZE;

MOSFET DEVICES;

EID: 0029513731     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)