Characteristics of InGaN-AlGaN multiple-quantum-well laser diodes

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 4, Issue 3, 1998, Pages 498-503

  Bour, David P ^a,b,c,d,e   Kneissl, Michael ^a,b,f,g   Romano, Linda T ^b,h,i,j,k   McCluskey, Matthew D ^b,c,g   Van De Walle, Chris G ^{b,l,m,n,o,p,q}   Krusor, Brent S ^b   Donaldson, Rose M ^b   Walker, Jack ^b   Dunnrowicz, Clarence J ^b   Johnson, Noble M ^a,b  

^a IEEE   (United States)

^b PALO ALTO RESEARCH CENTER   (United States)

^c MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^d Department of Obstetrics Gynecology   (United States)

^e SARNOFF CORPORATION   (United States)

^f UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^g UNIVERSITY OF CALIFORNIA   (United States)

^h PURDUE UNIVERSITY   (United States)

ⁱ CATERPILLAR INC   (United States)

^j UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^k UNIVERSITY OF OXFORD   (United Kingdom)

^l GHENT UNIVERSITY   (Belgium)

^m STANFORD UNIVERSITY   (United States)

ⁿ IBM T J WATSON RESEARCH CENTER   (United States)

^o PHILIPS RESEARCH LABORATORIES   (Netherlands)

^p Belg Amer Educational Foundation   (United States)

^q AMERICAN PHYSICAL SOCIETY   (United States)

more..

Author keywords

CVD; Nitrogen compounds; Quantum well lasers; Semiconductor epitaxial layers; Semiconductor heterojunctions; Semiconductor lasers; Semiconductor materials

Indexed keywords

CURRENT DENSITY; ETCHING; HETEROJUNCTIONS; ION BEAMS; LASER MODES; LIGHT EMISSION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; VAPOR PHASE EPITAXY;

FABRY PEROT MODES;

QUANTUM WELL LASERS;

EID: 0032064462     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.704108     Document Type: Article

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